An accurate analytical model for nonequilibrium drift-velocity and chord-mobility of In0.53Ga0.47As

E. Moreno, L. Varani

Abstract


Mobility models are an essential tool for an accurate description of the charge carrier dynamics in semiconductor materials and devices. By means of a simulator based on the Monte Carlo method which has been properly validated, a set of velocity and chord-mobility data was generated for electrons and holes in In0.53Ga0.47As bulk material as a function of electric field and for different concentrations of donors and acceptors. This set has been used to build an accurate velocity and chord-mobility analytical model, the mathematical simplicity of which represents a significant advantage because it provides necessary values by a rapid calculation process without forgoing accuracy. The model can be easily implemented in compact numerical simulations of electronic devices and associated circuits where a fast recovery of the velocity and mobility values corresponding to the local electric field and doping concentration is needed.

Keywords


InGaAs; mobility model; charge carrier mobility; drift-diffusion; semiconductor; Monte Carlo methods; transport; carrier velocity

Full Text:

PDF


DOI: https://doi.org/10.3952/physics.v58i2.3746

Refbacks

  • There are currently no refbacks.


ISSN 1648-8504 (Print)
ISSN 2424-3647 (Online)