Čeponis, T.

• Lithuanian Journal of Physics Vol 50 No 2 (2010) - Semiconductors
  Dependence of silicon pin diode electrical characteristics on proton fluence
  Abstract  PDF
• Lithuanian Journal of Physics Vol 50 No 2 (2010) - Semiconductors
  Investigation of the switching and carrier recombination characteristics in the proton irradiated and thermally annealed Si PIN diodes
  Abstract  PDF
• Lithuanian Journal of Physics Vol 50 No 4 (2010) - Semiconductors
  In situ analysis of the carrier lifetime in silicon during implantation of 1.5 MeV protons
  Abstract  PDF
• Lithuanian Journal of Physics Vol 51 No 3 (2011) - Semiconductors
  Fluence dependent variations of barrier charging and generation currents in neutron and proton irradiated Si particle detectors
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• Lithuanian Journal of Physics Vol 51 No 4 (2011) - Condensed Matter Physics and Technology
  Carrier drift and diffusion characteristics of Si particle detectors measured in situ during 8 MeV proton irradiation
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• Lithuanian Journal of Physics Vol 53 No 4 (2013) - Semiconductors
  Optically induced current deep level spectroscopy of radiation defects in neutron irradiated Si pad detectors
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• Lithuanian Journal of Physics Vol 54 No 2 (2014) - Semiconductors
  Spectroscopy of radiation traps in Si by temperature dependent photoconductivity and generation currents
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• Lithuanian Journal of Physics Vol 56 No 1 (2016) - Interdisciplinary Physics
  ESR spectroscopy of alanine impacted by high energy irradiations for wide range dosimetry
  Abstract  PDF
• Lithuanian Journal of Physics Vol 59 No 4 (2019) - Condensed Matter Physics and Technology
  Spectroscopy of defects in neutron irradiated ammono-thermal GaN by combining photoionization, photoluminescence and positron annihilation techniques
  Abstract  PDF  HTML
• Lithuanian Journal of Physics Vol 61 No 2 (2021) - Articles
  Profiling of proton beams by fluence scanners
  Abstract  PDF  HTML