Photoluminescence characterisation of GaAs/AlGaAs structures designed for microwave and terahertz detectors
Keywords: GaAs, AlGaAs, homojunction, photoluminescence, exciton, PL enhancement
AbstractThe photoluminescence (PL) spectra of GaAs/AlGaAs structures designed for microwave and terahertz detectors were investigated. Detailed experimental results of PL were obtained both before and after etching of the heavily doped layers. Possible mechanisms of carrier recombination are discussed and certain emphasis is put on the up to 20 times enhancement of the PL intensity observed in these detector structures.
Condensed Matter Physics and Technology