Interaction of semiconductor sample with TE10 mode in double ridged waveguide
Keywords: electromagnetic wave, double ridged (H-type) waveguide, TE mode, finite-difference time-domain method, semiconductor obstacle, resistive sensor
AbstractAn interaction of a semiconductor sample inserted in the centre of a double ridge waveguide between its metal ridges with TE10 mode was investigated. A three-dimensional finite-difference time-domain method was applied for the calculation of the electromagnetic field components in the waveguide section with a semiconductor sample. The average electric field strength in the sample and the reflection coefficient were determined. This sample is considered a prototype of the sensing element (SE) of a resistive sensor (RS) the performance of which is based on electron heating effect in the semiconductor. The optimal dimensions and specific resistance of the SE have been found, providing frequency response as flat as possible for the RS in the WRD250 waveguide covering the frequency range of 2.60–7.80 GHz.
Electrodynamics and Wave Processes