Far infrared spectroscopy and imaging of Cu(In, Ga)Se2 layers

L. Minkevičius; S. Balakauskas; M. Šoliūnas; R. Suzanovičienė; J. Uzėla; G. Molis; R. Juškėnas; A. Selskis; G. Niaura; G. Valušis; V. Tamošiūnas

doi:10.3952/physics.v53i4.2764

L. Minkevičius
S. Balakauskas
M. Šoliūnas
R. Suzanovičienė
J. Uzėla
G. Molis
R. Juškėnas
A. Selskis
G. Niaura
G. Valušis
V. Tamošiūnas

DOI: https://doi.org/10.3952/physics.v53i4.2764

Keywords: solar cells, chalcogenide solar cells, terahertz time domain spectroscopy, FT-IR spectroscopy

Abstract

The Fourier transform infrared spectroscopy (FT-IR), terahertz time domain spectroscopy (THz-TDS), and terahertz imaging were applied to study the properties of Cu(In, Ga)Se₂ (CIGS) layers grown on Mo/soda lime glass substrate. Correlation between the Infrared reflectivity spectrum around 5–7 THz (167–233 cm^–1), Raman spectra, and X-ray diffraction data is investigated for samples grown on the molybdenum layer of approximately 1 μm in thickness. Also, transparency of CIGS layers was demonstrated for frequencies down to several hundred gigahertzes. Such transparency opens possibilities for future three-dimensional characterization of CIGS structures using phase sensitive imaging.