Quantum and transport scattering times in AlGaAs/InGaAs nanoheterostructures with AlAs inserts in the spacer layer

  • G.B. Galiev
  • I.S. Vasil’evskii
  • E.A. Klimov
  • D.S. Ponomarev
  • R.A. Khabibullin
  • V.A. Kulbachinskii
  • D.V. Gromov
  • P.P. Maltsev
Keywords: AlAs inserts, quantum and transport scattering times, scattering mechanisms, nanoheterostructure


The influence of nano-sized AlAs inserts in the spacer layer AlGaAs on scattering mechanisms of AlGaAs/InGaAs nanoheterostructures has been considered. It was shown that the introduction of AlAs lead to mobility enhancement up to 20%. The ratio of transport-to-quantum scattering times revealed that in the case of the spacer with AlAs inserts the scattering on ionized Si-donors is strongly decreased in comparison to the spacer without AlAs.