Effect of low-dose-rate ionizing radiation on the complex dielectric permittivity of CdZnTe crystals
For the first time, the change in the real and imaginary parts of Cd1–xZnxTe crystals complex dielectric permittivity when exposed to ionizing radiation with a small exposure dose rate (about hundreds of μR/h) has been studied. Significant changes in the values of both parts of complex dielectric permittivity have been revealed. Regularities of specified changes have been established and explained taking into account a different radiation effect on free and bound charges. The basis of effect is the changes in the charge carrier localized states of point defect associates. Their appearance is due to a high concentration and a variety of intrinsic structural defects in the studied crystals as a consequence of the deviation of the crystal composition from the stoichiometric one.