Hall effect and magnetoresistance investigation of fast electron irradiated silicon

Abstract

A set of n-type silicon samples has been irradiated by 6.6 MeV electrons with doses from 1 to 5 (× 10¹⁶) e/cm², and temperature dependences of Hall and magnetoresistance mobilities were measured. The ratio of magnetoresistance and Hall mobilities was found equal to 1.15 ± 0.25. The correspondence of the data measured by both methods opened the possibility of measurement of electron mobility in semiconductors with microinhomogeneities by magnetoresistance effect investigation.