The terahertz emission and photoelectron spectroscopy study of CuInS2 thin films

S. Balakauskas; A. Koroliov; S. Grebinskij; M. Senulis; K. Sliužienė; V. Lisauskas; S. Mickevičius; R.L. Johnson

doi:10.3952/physics.v52i3.2472

S. Balakauskas
A. Koroliov
S. Grebinskij
M. Senulis
K. Sliužienė
V. Lisauskas
S. Mickevičius
R.L. Johnson

DOI: https://doi.org/10.3952/physics.v52i3.2472

Keywords: thin film, CuInS2, photovoltaic absorbers, sulfurisation, terahertz radiation, photoelectron spectroscopy

Abstract

CuInS2 thin films were produced by a two-stage process by means of the sulfurisation of magnetron-sputtered metallic precursor layers on molybdenum-covered soda-lime glass substrates. Terahertz pulse generation from the surface of CuInS2 thin films excited by femtosecond laser pulses was studied. Terahertz radiation efficiency is dependent on the stoichiometry of the films obtained. The interface formation between vacuumevaporated CdS and CuInS2 thin films was studied by photoelectron spectroscopy using synchrotron radiation. The valence band offset of 0.7 ± 0.1 eV was determined for the CdS/CuInS2 heterojunction.